Micron 4GB (1x 4GB) CL11 DDR3-1600 PC3-12800 1.5V 240-pin UDIMM RAM Module Classification_ram-ddr3-1333-udimm-4gb-2x-dr-fm M378A1K43BB2-CRC Capacity 8GB (1x 8GB)

M378A1K43BB2-CRC Capacity 8GB (1x 8GB) Brand Samsung Speed DDR4-2400 - 2400MT/s - PC4-19200 Voltage 1

M393B2K70CM0-CF8 Capacity 16GB (1x 16GB) Brand Samsung Speed DDR3-1066 -1066MT/s - 1067MT/s - PC3-8500 Voltage 1

8V Technology DDR2 Error Correction Non-ECC Signal Processing Unbuffered Form Factor 200-pin SODIMM Ranks Dual rank CAS Latency CL4 Configuration x16 Pieces in Kit 2 Compatibility

and provide a smoother computing experience

5V Technology DDR3L Error Correction Non-ECC Signal Processing Unbuffered Form Factor 204-pin SODIMM Ranks Dual rank CAS Latency CL13 Configuration x8 Pieces in Kit 1 Compatibility

Micron 4GB (1x 4GB) CL11 DDR3-1600 PC3-12800 1.5V 240-pin UDIMM RAM Module Classification_ram-ddr3-1333-udimm-4gb-2x-dr-fm M378A1K43BB2-CRC Capacity 8GB (1x 8GB)Product Overview This 4GB (1x 4GB) DDR3 1600 MT s RAM module from Micron is for use in DDR3 compatible systems and operates at 1600 MT s with an overall transfer rate of PC3 12800. This RAM module also operates at a standard voltage of 1. 5V with a CAS Latency of CL11, and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical Specifications Part No.