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5V Technology DDR3L Error Correction ECC Signal Processing Unbuffered Form Factor 240-pin EUDIMM Ranks Dual rank Configuration 256x8 Pieces in Kit 1 Compatibility
The company has manufacturing and logistics facilities in the United States
HMT351U6EFR8C-PB Capacity 4GB (1x 4GB) Brand Hynix Speed DDR3-1600 - 1600MT/s - PC3-12800 Voltage 1
x4 configuration RAM kit is for use in DDR2 compatible systems and operates at 667 MT/s with an overall transfer rate of PC2-5300
2V Technology DDR4 Error Correction ECC Signal Processing Unbuffered Form Factor 260-pin SODIMM Ranks Dual rank Configuration 2048M x8 Pieces in Kit 1 Compatibility
Samsung 8GB (1x 8GB) CL11 DDR3-1600 PC3-12800 1.5V ECC 240-pin EUDIMM RAM Module Classification_ram-ddr3l-1600-sodimm-2gb-1x-sr 5V Technology DDR3L Error CorrectionProduct Overview Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 8GB (1x 8GB) DDR3 1600 MT s 240 pin EUDIMM RAM module from Samsung . This RAM module is for use in DDR3 compatible systems and operates at 1600 MT s with an overall transfer rate of PC3 12800. This RAM module also operates at a standard voltage of 1. 5V with a CAS Latency of CL11, and is
