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Hynix 4GB (1x 4GB) CL11 DDR3-1600 PC3-12800 1.5V ECC 240-pin EUDIMM RAM Module Classification_ram-ddr4-2666-rdimm-16gb-2x-sr 2PBW (16TB/day)

SKU 87792560406
4.2
USD79.99 USD110.99

Pay in 4 interest-free payments of $20.00 Learn more

Shipping Estimate
USA
  • USA
  • CAN

Ships within 48 hours · Estimated delivery Aug 31 - Sep 5

Description

2PBW (16TB/day)

This RAM kit runs at 400MHz per second

M470T6554CZ3-CCC Capacity 512MB (1x 512MB) Brand Samsung Speed DDR2-400 - 400MT/s - PC2-3200 Voltage 1

RM1849 Capacity 16GB (1x 16GB) Brand Ramcity using Micron chips Speed DDR4-2400 - 2400MT/s - PC4-19200 Voltage 1

2V Technology DDR4 Error Correction ECC Signal Processing Unbuffered Form Factor 260-pin SODIMM Ranks Dual rank Configuration 2048M x8 Pieces in Kit 1 Compatibility

Hynix 4GB (1x 4GB) CL11 DDR3-1600 PC3-12800 1.5V ECC 240-pin EUDIMM RAM Module Classification_ram-ddr4-2666-rdimm-16gb-2x-sr 2PBW (16TB/day)Product Overview Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 4GB (1x 4GB) DDR3 1600 MT s 240 pin EUDIMM RAM module from Hynix . This RAM module is for use in DDR3 compatible systems and operates at 1600 MT s with an overall transfer rate of PC3 12800. This RAM module also operates at a standard voltage of 1. 5V with a CAS Latency of CL11, and is designed

Exchange/Return Notes
  • We offer a 30-day return/exchange service after receiving.
  • Final sale items are not eligible for returns or exchanges.
  • To process your return/exchange, please contact us at [email protected]
  • Please click here for more details>>> Return & Exchange Policy

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