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M471B5273DH0-YF8 Capacity 4GB (1x 4GB) Brand Samsung Speed DDR3L-1066 -1066MT/s - 1067MT/s - PC3L-8500 Voltage 1
M386A8K40BM1-CPB Capacity 64GB (1x 64GB) Brand Samsung Speed DDR4-2133 - 2133MT/s - PC4-17000 Voltage 1
x8 configuration RAM kit from Hynix is for use in DDR4 compatible systems and operates at 2133 MT/s with an overall transfer rate of PC4-17000
Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 16GB (2x 8GB) DDR3L 1600 MT/s 240-pin RDIMM RAM kit from Samsung
8V Technology DDR2 Error Correction ECC Signal Processing Fully Buffered Form Factor 240-pin FB-DIMM Ranks Dual rank Configuration 36-chip 256Mx4 Pieces in Kit 1 Compatibility
Samsung 1GB (1x 1GB) CL2 DDR-266 PC2100 2.5V DR x4 ECC Registered 184-pin RDIMM RAM Module Classification_ram-ddr3-1066-sodimm-8gb-1x-dr-fm M471B5273DH0-YF8 Capacity 4GB (1x 4GB)Product Overview Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 1GB (1x 1GB) DDR 266 MT s 184 pin RDIMM RAM module from Samsung . This Dual rank, x4 configuration RAM module is for use in DDR compatible systems and operates at 266 MT s with an overall transfer rate of PC2100. This RAM module also operates at a standard voltage of 2. 5V with a CAS Latency of
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