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Random Write IOPS (4KB
M393B1G73DB0-YK0 Capacity 8GB (1x 8GB) Brand Samsung Speed DDR3L-1600 - 1600MT/s - PC3L-12800 Voltage 1
and 16 lane slots to benchmark the XP941
M393A4K40CB1-CRC Capacity 32GB (1x 32GB) Brand Samsung Speed DDR4-2400 - 2400MT/s - PC4-19200 Voltage 1
8V Technology DDR2 Error Correction Non-ECC Signal Processing Unbuffered Form Factor 240-pin UDIMM Ranks Dual rank Configuration 16-chip 128Mx8 Pieces in Kit 1 Compatibility
Hynix 8GB (1x 8GB) CL19 DDR4-2666 PC4-21300 1.2V 288-pin UDIMM RAM Module Form Factor_288-pin EUDIMM Random Write IOPS (4KBProduct Overview This 8GB (1x 8GB) DDR4 2666 MT s RAM module from Hynix is for use in DDR4 compatible systems and operates at 2666 MT s with an overall transfer rate of PC4 21300. This RAM module also operates at a standard voltage of 1. 2V with a CAS Latency of CL19, and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical Specifications Part No.
US$ 35.00
US$ 15.00
US$ 35.00
