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Ships within 48 hours · Estimated delivery Aug 29 - Sep 3
Pay in 4 interest-free payments of $26.25 Learn more
Ships within 48 hours · Estimated delivery Aug 29 - Sep 3
M378B5673EH1-CF8 Capacity 2GB (1x 2GB) Brand Samsung Speed DDR3-1066 -1066MT/s - 1067MT/s - PC3-8500 Voltage 1
iPhone 4S with pentalobular screws
MTA18ASF2G72PDZ-2G3B1 Capacity 16GB (1x 16GB) Brand Micron Speed DDR4-2400 - 2400MT/s - PC4-19200 Voltage 1
This 16GB (2x 8GB) DDR4 2133 MT/s Dual rank
This 8GB (2x 4GB) DDR3 1333 MT/s Dual rank
Hynix 8GB (1x 8GB) CL17 DDR4-2400 PC4-19200 1.2V 288-pin UDIMM RAM Module Form Factor_288-pin EUDIMM M378B5673EH1-CF8 Capacity 2GB (1x 2GB)Product Overview This 8GB (1x 8GB) DDR4 2400 MT s RAM module from Hynix is for use in DDR4 compatible systems and operates at 2400 MT s with an overall transfer rate of PC4 19200. This RAM module also operates at a standard voltage of 1. 2V with a CAS Latency of CL17, and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical Specifications Part No.
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