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Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 2GB (1x 2GB) DDR 333 MT/s 184-pin RDIMM RAM module from Samsung
5V Technology DDR3L Error Correction Non-ECC Signal Processing Unbuffered Form Factor 204-pin SODIMM Ranks Single rank CAS Latency CL13 Configuration 1024M x8 Pieces in Kit 1 Compatibility
M393B5170FH0-CH9Q5 Capacity 4GB (1x 4GB) Brand Samsung Speed DDR3-1333 - 1333MT/s - PC3-10600 Voltage 1
M395T5160QZ4-CE66 Capacity 4GB (1x 4GB) Brand Samsung Speed DDR2-667 - 667MT/s - PC2-5300 Voltage 1
2xM378B5273DH0-CH9 Capacity 8GB (2x 4GB) Brand Samsung Speed DDR3-1333 - 1333MT/s - PC3-10600 Voltage 1
Hynix 16GB (2x 8GB) DDR4-2133 PC4-17000 1.2V DR x8 288-pin UDIMM RAM Kit Model_Mac_Book_Pro_5_4 Dramatically improve performance and handleProduct Overview This 16GB (2x 8GB) DDR4 2133 MT s Dual rank, x8 configuration RAM kit from Hynix is for use in DDR4 compatible systems and operates at 2133 MT s with an overall transfer rate of PC4 17000. This RAM kit also operates at a standard voltage of 1. 2V and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical Specifications Part No.
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