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In this case Samsung RAM will be swapped for Ramcity manufactured modules using Samsung chips
2V Technology DDR4 Error Correction Non-ECC Signal Processing Unbuffered Form Factor 260-pin SODIMM Ranks Dual rank Configuration x8 Pieces in Kit 2 Compatibility
2V Technology DDR4 Error Correction Non-ECC Signal Processing Unbuffered Form Factor 260-pin SODIMM Ranks Single rank CAS Latency CL17 Configuration x8 Pieces in Kit 2 Compatibility
HMT351S6BFR8C-H9N0 Capacity 4GB (1x 4GB) Brand Hynix Speed DDR3-1333 - 1333MT/s - PC3-10600 Voltage 1
CT4G3S160BM Capacity 4GB (1x 4GB) Brand Crucial Speed DDR3L-1600 - 1600MT/s - PC3L-12800 Voltage 1
Samsung 8GB (1x 8GB) CL17 DDR4-2400 PC4-19200 1.2V 288-pin UDIMM RAM Module Model_iMAC_11_2 In this case Samsung RAMProduct Overview This 8GB (1x 8GB) DDR4 2400 MT s RAM module from Samsung is for use in DDR4 compatible systems and operates at 2400 MT s with an overall transfer rate of PC4 19200. This RAM module also operates at a standard voltage of 1. 2V with a CAS Latency of CL17, and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical Specifications Part No.
