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Ships within 48 hours · Estimated delivery Aug 31 - Sep 5
Pay in 4 interest-free payments of $26.00 Learn more
Ships within 48 hours · Estimated delivery Aug 31 - Sep 5
x8 configuration RAM module from Hynix is for use in DDR4 compatible systems and operates at 2133 MT/s with an overall transfer rate of PC4-17000
5V Technology DDR3 Error Correction Non-ECC Signal Processing Unbuffered Form Factor 204-pin SODIMM Ranks Dual rank Configuration 16-chip 512M x8 Pieces in Kit 1 Compatibility
M471B1G73BH0-CK0 Capacity 8GB (1x 8GB) Brand Samsung Speed DDR3-1600 - 1600MT/s - PC3-12800 Voltage 1
M393B1K70QB0-CMA Capacity 8GB (1x 8GB) Brand Samsung Speed DDR3-1866 - 1866MT/s - PC3-14900 Voltage 1
5V Technology DDR3L Error Correction Non-ECC Signal Processing Unbuffered Form Factor 204-pin SODIMM Ranks Dual rank CAS Latency CL11 Configuration 16-chip 1024M x8 Pieces in Kit 1 Compatibility
Hynix 4GB (2x 2GB) DDR3-1066 PC3-8500 1.5V DR x8 ECC 240-pin EUDIMM RAM Kit Ranks_Dual x8 configuration RAM module fromProduct Overview Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 4GB (2x 2GB) DDR3 1066 MT s 240 pin EUDIMM RAM kit from Hynix . This Dual rank, x8 configuration RAM kit is for use in DDR3 compatible systems and operates at 1066 MT s with an overall transfer rate of PC3 8500. This RAM kit also operates at a standard voltage of 1. 5V and is designed to allow
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