Samsung 8GB (1x 8GB) CL11 DDR3-1600 PC3-12800 1.5V ECC Registered 240-pin RDIMM RAM Module Model_iMAC_18_2 M391B5673DZ1-CF8 Capacity 2GB (1x 2GB)

M391B5673DZ1-CF8 Capacity 2GB (1x 2GB) Brand Samsung Speed DDR3-1066 -1066MT/s - 1067MT/s - PC3-8500 Voltage 1

HMA41GR7MFR8N-TF Capacity 8GB (1x 8GB) Brand Hynix Speed DDR4-2133 - 2133MT/s - PC4-17000 Voltage 1

2V Technology DDR4 Error Correction ECC Signal Processing Registered Form Factor 288-pin RDIMM Ranks Dual rank Configuration x4 Pieces in Kit 2

2xM470L6423EN0-CB0 Capacity 1GB (2x 512MB) Brand Samsung Speed DDR-266 - 266MT/s - PC2100 Voltage 2

This RAM module is for use in DDR3L compatible systems and operates at 1333 MT/s with an overall transfer rate of PC3L-10600

Samsung 8GB (1x 8GB) CL11 DDR3-1600 PC3-12800 1.5V ECC Registered 240-pin RDIMM RAM Module Model_iMAC_18_2 M391B5673DZ1-CF8 Capacity 2GB (1x 2GB)Product Overview Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 8GB (1x 8GB) DDR3 1600 MT s 240 pin RDIMM RAM module from Samsung . This RAM module is for use in DDR3 compatible systems and operates at 1600 MT s with an overall transfer rate of PC3 12800. This RAM module also operates at a standard voltage of 1. 5V with a CAS Latency of CL11, and is designed