Micron 8GB (1x 8GB) CL11 DDR3-1600 PC3-12800 1.5V ECC Registered 240-pin RDIMM RAM Module Classification_ram-ddr3l-1066-sodimm-4gb-1x-fm 5V Technology DDR3L Error Correction

5V Technology DDR3L Error Correction Non-ECC Signal Processing Unbuffered Form Factor 240-pin UDIMM Ranks Single rank Configuration 8-chip 256Mx8 Pieces in Kit 1 Compatibility

This 8GB (2x 4GB) DDR3L 1600 MT/s Single rank

5V Technology DDR3L Error Correction Non-ECC Signal Processing Unbuffered Form Factor 240-pin UDIMM Ranks Dual rank Configuration 16-chip 256Mx8 Pieces in Kit 2 Compatibility

M474B5273DH0-YH9 Capacity 4GB (1x 4GB) Brand Samsung Speed DDR3L-1333 - 1333MT/s - PC3L-10600 Voltage 1

but the effective rate is 2666 megatransfers per second (MT/s) because there are 1333 million rising edges per second and 1333 million falling edges per second of a clock signal running at 1333 MHz

Micron 8GB (1x 8GB) CL11 DDR3-1600 PC3-12800 1.5V ECC Registered 240-pin RDIMM RAM Module Classification_ram-ddr3l-1066-sodimm-4gb-1x-fm 5V Technology DDR3L Error CorrectionProduct Overview Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 8GB (1x 8GB) DDR3 1600 MT s 240 pin RDIMM RAM module from Micron . This RAM module is for use in DDR3 compatible systems and operates at 1600 MT s with an overall transfer rate of PC3 12800. This RAM module also operates at a standard voltage of 1. 5V with a CAS Latency of CL11, and is designed