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2xM386A8K40BMB-CPB Capacity 128GB (2x 64GB) Brand Samsung Speed DDR4-2133 - 2133MT/s - PC4-17000 Voltage 1
HMT125S6TFR8C-H9N0 Capacity 2GB (1x 2GB) Brand Hynix Speed DDR3-1333 - 1333MT/s - PC3-10600 Voltage 1
CT16G4DFD8266 Capacity 16GB (1x 16GB) Brand Crucial Speed DDR4-2666 - 2666MT/s - PC4-21300 Voltage 1
2V Technology DDR4 Error Correction Non-ECC Signal Processing Unbuffered Form Factor 260-pin SODIMM Ranks Single rank Configuration 1024Meg x8 Pieces in Kit 1 Compatibility
5V Technology DDR3 Error Correction Non-ECC Signal Processing Unbuffered Form Factor 240-pin UDIMM Ranks Single rank CAS Latency CL11 Configuration x8 Pieces in Kit 2
Samsung 8GB (1x 8GB) CL9 DDR3L-1333 PC3L-10600 1.35V / 1.5V ECC Registered 240-pin RDIMM RAM Module Classification_ram-ddr3-1333-rdimm-8gb-1x 2xM386A8K40BMB-CPB Capacity 128GB (2x 64GB)Product Overview Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 8GB (1x 8GB) DDR3L 1333 MT s 240 pin RDIMM RAM module from Samsung . This RAM module is for use in DDR3L compatible systems and operates at 1333 MT s with an overall transfer rate of PC3L 10600. This RAM module also operates at a standard voltage of 1. 35V 1. 5V with a CAS Latency of CL9, and is
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