Samsung 16GB (1x 16GB) DDR4-2666 PC4-21300 1.2V DR x8 ECC 260-pin SODIMM RAM Module Classification_ram-ddr3-1333-sodimm-4gb-2x-dr-fm 2xHYMP151P72CP4-S6 Capacity 8GB (2x 4GB)

2xHYMP151P72CP4-S6 Capacity 8GB (2x 4GB) Brand Hynix Speed DDR2-800 - 800MT/s - PC2-6400 Voltage 1

8V Technology DDR2 Error Correction ECC Signal Processing Fully Buffered Form Factor 240-pin FB-DIMM Ranks Dual rank Configuration 36-chip 128Mx4 Pieces in Kit 2 Compatibility

Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 8GB (1x 8GB) DDR3 1600 MT/s 240-pin EUDIMM RAM module from Samsung

This 2GB (2x 1GB) DDR3 1333 MT/s Single rank

NT2GC64B88BONS-CG Capacity 2GB (1x 2GB) Brand Nanya Speed DDR3-1333 - 1333MT/s - PC3-10600 Voltage 1

Samsung 16GB (1x 16GB) DDR4-2666 PC4-21300 1.2V DR x8 ECC 260-pin SODIMM RAM Module Classification_ram-ddr3-1333-sodimm-4gb-2x-dr-fm 2xHYMP151P72CP4-S6 Capacity 8GB (2x 4GB)Product Overview Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 16GB (1x 16GB) DDR4 2666 MT s 260 pin SODIMM RAM module from Samsung . This Dual rank, x8 configuration RAM module is for use in DDR4 compatible systems and operates at 2666 MT s with an overall transfer rate of PC4 21300. This RAM module also operates at a standard voltage of 1. 2V and is