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5V Technology DDR3 Error Correction Non-ECC Signal Processing Unbuffered Form Factor 240-pin UDIMM Ranks Single rank CAS Latency CL11 Configuration x8 Pieces in Kit 2
x8 configuration RAM module from Samsung is for use in DDR3 compatible systems and operates at 1066 MT/s with an overall transfer rate of PC3-8500
2V Technology DDR4 Error Correction Non-ECC Signal Processing Unbuffered Form Factor 260-pin SODIMM Ranks Single rank Configuration 1024Meg x8 Pieces in Kit 1 Compatibility
M393A4K40CB1-CRC Capacity 32GB (1x 32GB) Brand Samsung Speed DDR4-2400 - 2400MT/s - PC4-19200 Voltage 1
M393B2G70QH0-YK0 Capacity 16GB (1x 16GB) Brand Samsung Speed DDR3L-1600 - 1600MT/s - PC3L-12800 Voltage 1
Hynix 4GB (2x 2GB) DDR2-800 PC2-6400 1.8V DR x8 240-pin UDIMM RAM Kit Classification_ram-ddr3l-1600-sodimm-4gb-2x-sr 5V Technology DDR3 Error CorrectionProduct Overview This 4GB (2x 2GB) DDR2 800 MT s Dual rank, x8 configuration RAM kit from Hynix is for use in DDR2 compatible systems and operates at 800 MT s with an overall transfer rate of PC2 6400. This RAM kit also operates at a standard voltage of 1. 8V and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical Specifications Part No. 2xHMP125U6EFR8C S6
US$ 175.00
US$ 199.00
US$ 2150.00
