Hynix 8GB (1x 8GB) CL11 DDR3L-1600 PC3L-12800 1.35V / 1.5V ECC 240-pin EUDIMM RAM Module Classification_ram-ddr4-2400-ecc-sodimm-16gb-1x-dr-fm 2V Technology DDR4 Error Correction

2V Technology DDR4 Error Correction ECC Signal Processing Unbuffered Form Factor 260-pin SODIMM Ranks Dual rank Configuration 2048M x8 Pieces in Kit 2 Compatibility

Uncontrolled

This 8GB (1x 8GB) DDR3 1600 MT/s Dual rank

Fitted Pouch - flexible plastic tool roll to keep your spudgers at the ready

M378B5273DH0-CK0 Capacity 4GB (1x 4GB) Brand Samsung Speed DDR3-1600 - 1600MT/s - PC3-12800 Voltage 1

Hynix 8GB (1x 8GB) CL11 DDR3L-1600 PC3L-12800 1.35V / 1.5V ECC 240-pin EUDIMM RAM Module Classification_ram-ddr4-2400-ecc-sodimm-16gb-1x-dr-fm 2V Technology DDR4 Error CorrectionProduct Overview Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 8GB (1x 8GB) DDR3L 1600 MT s 240 pin EUDIMM RAM module from Hynix . This RAM module is for use in DDR3L compatible systems and operates at 1600 MT s with an overall transfer rate of PC3L 12800. This RAM module also operates at a standard voltage of 1. 35V 1. 5V with a CAS Latency of CL11, and is