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Ships within 48 hours · Estimated delivery Sep 2 - Sep 7
Pay in 4 interest-free payments of $31.50 Learn more
Ships within 48 hours · Estimated delivery Sep 2 - Sep 7
2xCT51264BF186DJ Capacity 8GB (2x 4GB) Brand Crucial Speed DDR3L-1866 - 1866MT/s - PC3L-14900 Voltage 1
This 8GB (1x 8GB) DDR4 2400 MT/s RAM module from Samsung is for use in DDR4 compatible systems and operates at 2400 MT/s with an overall transfer rate of PC4-19200
5V Technology DDR3L Error Correction Non-ECC Signal Processing Unbuffered Form Factor 240-pin UDIMM Ranks Single rank CAS Latency CL11 Configuration x8 Pieces in Kit 2
M393B5170FH0-CH9Q5 Capacity 4GB (1x 4GB) Brand Samsung Speed DDR3-1333 - 1333MT/s - PC3-10600 Voltage 1
35V with a CAS Latency of CL11
Hynix 8GB (1x 8GB) CL11 DDR3L-1600 PC3L-12800 1.35V / 1.5V ECC 204-pin SODIMM RAM Module Classification_ram-ddr3l-1066-sodimm-4gb-2x-sr-fm 2xCT51264BF186DJ Capacity 8GB (2x 4GB)Product Overview Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 8GB (1x 8GB) DDR3L 1600 MT s 204 pin SODIMM RAM module from Hynix . This RAM module is for use in DDR3L compatible systems and operates at 1600 MT s with an overall transfer rate of PC3L 12800. This RAM module also operates at a standard voltage of 1. 35V 1. 5V with a CAS Latency of CL11, and is
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