Nanya 4GB (1x 4GB) CL11 DDR3-1600 PC3-12800 1.5V 240-pin UDIMM RAM Module Classification_ram-ddr4-2400-rdimm-16gb-1x-dr 2xM393B5170EH1-CH9 Capacity 8GB (2x 4GB)

2xM393B5170EH1-CH9 Capacity 8GB (2x 4GB) Brand Samsung Speed DDR3-1333 - 1333MT/s - PC3-10600 Voltage 1

This RAM module runs at 0MHz per second

Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 16GB (2x 8GB) DDR4 2666 MT/s 288-pin EUDIMM RAM kit from Samsung

Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 1GB (1x 1GB) DDR 266 MT/s 184-pin RDIMM RAM module from Samsung

HYMP125U72CP8-S6 Capacity 2GB (1x 2GB) Brand Hynix Speed DDR2-800 - 800MT/s - PC2-6400 Voltage 1

Nanya 4GB (1x 4GB) CL11 DDR3-1600 PC3-12800 1.5V 240-pin UDIMM RAM Module Classification_ram-ddr4-2400-rdimm-16gb-1x-dr 2xM393B5170EH1-CH9 Capacity 8GB (2x 4GB)Product Overview This 4GB (1x 4GB) DDR3 1600 MT s RAM module from Nanya is for use in DDR3 compatible systems and operates at 1600 MT s with an overall transfer rate of PC3 12800. This RAM module also operates at a standard voltage of 1. 5V with a CAS Latency of CL11, and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical Specifications Part No.