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HMT351S6BFR8C-H9 Capacity 4GB (1x 4GB) Brand Hynix Speed DDR3-1333 - 1333MT/s - PC3-10600 Voltage 1
2V Technology DDR4 Error Correction ECC Signal Processing Unbuffered Form Factor 260-pin SODIMM Ranks Dual rank Configuration 18-chip 1048M x8 Pieces in Kit 1 Compatibility
8V Technology DDR3 Error Correction Non-ECC Signal Processing Unbuffered Form Factor 204-pin SODIMM CAS Latency CL9 Pieces in Kit 1 Compatibility
KTC-PR266_512 Capacity 512MB (1x 512MB) Brand Kingston Speed DDR-266 - 266MT/s - PC2100 Voltage 2
Memory and storage account for over half of a typical server’s bill of materials (BOM) cost
Samsung 4GB (1x 4GB) CL11 DDR3L-1600 PC3L-12800 1.35V / 1.5V SR x8 240-pin UDIMM RAM Module Year_2015 HMT351S6BFR8C-H9 Capacity 4GB (1x 4GB)Product Overview This 4GB (1x 4GB) DDR3L 1600 MT s Single rank, x8 configuration RAM module from Samsung is for use in DDR3L compatible systems and operates at 1600 MT s with an overall transfer rate of PC3L 12800. This RAM module also operates at a standard voltage of 1. 35V 1. 5V with a CAS Latency of CL11, and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience.
