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Ships within 48 hours · Estimated delivery Aug 31 - Sep 5
Insulation Resistance: Milli-Ohm/DC500V
5 grams 1 38 PIR Sensor HC-SR501
Weight: 16 grams
Screw terminals provide a convention connection to the actual data cable
5Vp-p(50Ω)
Transistor 40N10 MOS-N-FET 100 V, 40 A , TO220 ( refurbished ) electronic circuit Insulation Resistance: Milli-Ohm/DC500VSpecifications Technical parameters of Transistor 40N10 MOS N FET 100 V, 40 A, 0. 04 Ohm, 160 W, TO220 Transistor type: N MOSFET Maximum voltage drain source Uds: 100 [V] Maximum drain current: 40 [A] Operating temperature: 55~150 [C] Drain source resistance at 25: 0. 04 [ohm] Power Pd: 150 [W] Housing: TO 220 Maximum voltage gate source Ugs: 30 [V] Model: 40N10 RFP40N10 Mounting: THT Diode: no
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